IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

Note 1

6

10

S

C

iss

1870

pF

C

oss

V

290

pF

C

rss

90

pF

t

d(on)

11

n s

t

r

V

14

n s

t

d(off)

R

28

n s

t

f

8n s

Q

g(on)

54

nC

Q

gs

V

18

nC

Q

gd

25

nC

R

thJC

0.65

K/W

R

thCK

(TO-247)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

12

A

I

SM

Repetitive;

48

A

pulse width limited by T

JM

V

SD

I

1.5

V

t

rr

250

n s

Q

RM

0.8

mC

I

RM

6.5

A

I

Note: 1. Pulse test, t

£ 300 ms, duty cycle d £ 2 %

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

ÆP

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3

TO-268 Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.9

5.1

.193

.201

2.7

2.9

.106

.114

.02

.25

.001

.010

b

1.15

1.45

.045

.057

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80 14.00

.543

.551

E

15.85 16.05

.624

.632

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70 19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161

Min Recommended Footprint

IXFH 12N50F

IXFT 12N50F