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BUJD203AX Scheda tecnica(PDF) 1 Page - WeEn Semiconductors |
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BUJD203AX Scheda tecnica(HTML) 1 Page - WeEn Semiconductors |
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1 / 13 page ![]() BUJD203AX NPN power transistor with integrated diode 9 October 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti- parallel E-C diode in a SOT186A (TO220F) "full pack" plastic package. 2. Features and benefits • Fast switching • High voltage capability • Integrated anti-parallel E-C diode • Isolated package • Very low switching and conduction losses 3. Applications • DC-to-DC converters • Electronic lighting ballasts • Inverters • Motor control systems 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 2 C collector 3 E emitter mb n.c. mounting base; isolated 3 2 1 mb TO-220F (SOT186A) sym131 C E B |
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