WNSC101200W datasheet(1/11 Pages) WEEN

Il numero della parte	WNSC101200W

Spiegazioni elettronici	Silicon Carbide Diode

PDF	11 Pages

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Produttore elettronici	WEEN [WeEn Semiconductors]

Homepage	http://www.ween-semi.com

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WNSC101200W

Silicon Carbide Diode

Rev.02 - 2 July 2019

Product data sheet

1. General description

Silicon Carbide Schottky diode in a TO247-2L

plastic package, designed for high frequency

switched-mode power supplies.

2. Features and benefits

3. Applications

• Power factor correction

• Telecom / Server SMPS

• UPS

• PV inverter

• PC Silverbox

• LED / OLED TV

• Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

VRRM

repetitive peak reverse

voltage

1200

V

IF(AV)

average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 138 °C;

Fig. 1; Fig. 2; Fig. 3; Fig. 4

10

A

Tj

junction temperature

175

°C

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VF

forward voltage

IF = 10 A; Tj = 25 °C; Fig. 6

-

1.4

1.6

V

IF = 10 A; Tj = 150 °C; Fig. 6

-

1.85

2.3

V

IF = 10 A; Tj = 175 °C; Fig. 6

-

2

2.6

V

Dynamic characteristics

Qr

recovered charge

IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs;

Tj = 25 °C; Fig. 8

-

24

-

nC

• Highly stable switching performance

• High forward surge capability IFSM

• Extremely fast reverse recovery time

• Superior in efficiency to Silicon Diode alternatives

• Reduced losses in associated MOSFET

• Reduced EMI

• Reduced cooling requirements

• RoHS compliant

• High junction operating temperature capability (Tj(max) = 175 °C)

RoHS

halogen-Free

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