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FFB4413D Scheda tecnica(PDF) 3 Page - First Silicon Co., Ltd |
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FFB4413D Scheda tecnica(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 11 page ![]() 2014. 12. 06 3/11 Revision No : 0 FFB4413D ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit ON CHARACTERISTICS ( 3 ) h n i a G t n e r r u C C D FE –– (I C = 0.1 mAdc, VCE – – 0 2 ) c d V 0 . 1 = (I C = 1.0 mAdc, VCE – – 0 4 ) c d V 0 . 1 = (I C = 10 mAdc, VCE – – 0 8 ) c d V 0 . 1 = (I C = 150 mAdc, VCE 0 0 3 0 0 1 ) c d V 0 . 1 = (I C = 500 mAdc, VCE – – 0 4 ) c d V 0 . 2 = Collector–Emitter Saturation Voltage VCE(sat) Vdc (I C = 150 mAdc, IB 4 . 0 – – ) c d A m 5 1 = (I C = 500 mAdc, IB 5 7 . 0 – – ) c d A m 0 5 = V e g a t l o V n o i t a r u t a S r e t t i m E – e s a B BE(sat) Vdc (I C = 150 mAdc, IB 5 9 . 0 5 7 . 0 ) c d A m 5 1 = (I C = 500 mAdc, IB 2 . 1 – – ) c d A m 0 5 = SMALL–SIGNAL CHARACTERISTICS f t c u d o r P h t d i w d n a B — n i a G – t n e r r u C T MHz (I C = 20 mAdc, VCE – – 0 5 2 ) z H M 0 0 1 = f , c d V 0 1 = C e c n a t i c a p a C e s a B – r o t c e ll o C cb pF (V CB= 5.0 Vdc, IE 5 . 6 – – ) z H M 0 . 1 = f , 0 = C e c n a t i c a p a C e s a B – r e t t i m E eb pF (V EB = 0.5 Vdc, IC 0 3 – – ) z H M 0 . 1 = f , 0 = h e c n a d e p m I t u p n I ie kΩ (V CE= 10 Vdc, IC 5 1 0 . 1 ) z H k 0 . 1 = f , c d A m 0 . 1 = h o i t a R k c a b d e e F e g a t l o V re X 10 –4 (V CE= 10 Vdc, IC 0 . 8 1 . 0 ) z H k 0 . 1 = f , c d A m 0 . 1 = h n i a G t n e r r u C l a n g i S – ll a m S fe — (V CE= 10 Vdc, IC 0 0 5 0 4 ) z H k 0 . 1 = f , c d A m 0 . 1 = h e c n a t t i m d A t u p t u O oe µmhos (V CE= 10 Vdc, IC 0 3 0 . 1 ) z H k 0 . 1 = f , c d A m 0 . 1 = SWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, VEB = 2.0 Vdc td — 15 Rise Time I C = 150 mAdc, IB1= 15 mAdc) tr — 20 ns Storage Time (VCC = 30 Vdc, IC = 150 mAdc ts — 225 ns Fall Time I B1 = I B2 = 15 mAdc) tf — 30 Figure 1. Turn–On Time Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope 1.0 kΩ +30 V 200Ω C S*< 10 pF 1.0 kΩ +30 V 200 Ω C S* < 10 pF 1N916 + 16 V –14 V < 20 ns <2.0 ns – 2.0V + 16 V Figure 2. Turn–Off Time 1.0 to 100µs, DUTY CYCLE = 2% SWITCHING TIME EQUIVALENT TEST CIRCUITS (Q1 NPN) 0 0 1.0 to 100µs, DUTY CYCLE = 2% – 4.0 V 3. Pulse Test: Pulse Width<300 µs; Duty Cycle<2.0%. Q1(NPN) |
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