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STL27N15 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STL27N15 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() 1/6 TARGET DATA June 2003 This is preliminary information on a new product forseen to be developped. Details are subject to change without notice STL27N15 N-CHANNEL 150V - 0.045 Ω - 27A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET s TYPICAL RDS(on) = 0.045 Ω s IMPROVED DIE-TO-FOOTPRINT RATIO s VERY LOW PROFILE PACKAGE (1mm MAX) s VERY LOW THERMAL RESISTANCE s VERY LOW GATE CHARGE DESCRIPTION This MOSFET series realized with STMicroelectronics unique "STripFET™" process has specifically been designed to minimize input capacitance and gate charge. It’s therefore suitable as primary switch in advanced high efficiency, high frequency isolated DC-DC converter for telecom an computer application. The new PowerFLAT™ package allows e significant reduction in a board space without compromising performance. APPLICATIONS s HIGH-EFFICIENCY ISOLATED DC-DC CONVERTERS s TELECOM AND BATTERY CHARGER ADAPTOR s SYNCHRONOUS RECTIFICATION Ordering Information TYPE VDSS RDS(on) ID STL15N15 150 V <0.060 Ω 27 A(1) SALES TYPE MARKING PACKAGE PACKAGING STL27N15 L27N15 PowerFLAT TAPE & REEL PowerFLAT™(6x5) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 150 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 150 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C (Steady State) 6A ID Drain Current (continuous) at TC = 100°C 4A IDM(3) Drain Current (pulsed) 24 A Ptot(2) Total Dissipation at TC = 25°C (Steady State) 4W Ptot(1) Total Dissipation at TC = 25°C 80 W Derating Factor 0.03 W/°C dv/dt (5) Peak Diode Recovery voltage slope TBD V/ns Tstg Storage Temperature -55 to 150 °C Tj Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM |
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