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PRMH2 Scheda tecnica(PDF) 3 Page - Nexperia B.V. All rights reserved

Il numero della parte PRMH2
Spiegazioni elettronici  50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors(RET)
PDF  13 Pages
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Produttore elettronici  NEXPERIA [Nexperia B.V. All rights reserved]
Homepage  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PRMH2 Scheda tecnica(HTML) 3 Page - Nexperia B.V. All rights reserved

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Nexperia
PRMH2
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage open base
-
50
V
VEBO
emitter-base voltage
open collector
-
10
V
positive
-
40
V
VI
input voltage
negative
-
-10
V
IO
output current
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
325
mW
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
480
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Tamb (°C)
-75
175
125
25
75
-25
aaa-024487
200
300
100
400
500
Ptot
(mW)
0
FR4 PCB, standard footprint
Fig. 1. Per device: Power derating curve
PRMH2
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved
Product data sheet
14 September 2018
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