MMBZ16VTAL datasheet(4/12 Pages) NEXPERIA

Il numero della parte	MMBZ16VTAL

Spiegazioni elettronici	High surge current unidirectional double ESD protection diodes

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MMBZ16VTAL

High surge current unidirectional double ESD protection diodes

MMBZ16VTAL

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Product data sheet

6 November 2017

4 / 12

tp (ms)

4.0

3.0

1.0

2.0

006aab319

100

150

IPP

(%)

50 % IPP; 1000 µs

100 % IPP; 10 µs

Fig. 3. 10/1000 µs pulse waveform according to IEC 61643-321

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

Tj = 25 °C

VBR

breakdown voltage

IR = 1 mA; Tj = 25 °C

[1]

15.68 16

16.32 V

IRM

reverse leakage

current

VRWM = 13 V; Tj = 25 °C

[1]

0.1

diode capacitance

f = 1 MHz; VR = 0 V; Tj = 25 °C

[1]

IPP = 11 A; tp = 8/20 µs; Tj = 25 °C

[2] [1] -

VCL

clamping voltage

IPP = 1.7 A; tp = 10/1000 µs; Tj = 25 °C [3] [1] -

19.5

[1] Measured from pin 1 or 2 to pin 3.

[2] According to IEC 61000-4-5.

[3] According to IEC 61643-321.

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