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MMBTA56 Scheda tecnica(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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MMBTA56 Scheda tecnica(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2 / 4 page ![]() 2 / 4 www.pingjingsemi.com Revision:1.0 Apr-2019 MMBTA56 PNP Transistor Electrical Characteristics Ratings at 25 ℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Max. Unit HFE 100 100 400 - Collector Base Cutoff Current at -VCB = 80 V -ICBO - 100 nA Collector Base Breakdown Voltage at -IC = 100 μA -V(BR)CBO 80 - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 80 - V Emitter Base Breakdown Voltage at -IE = 100 μA -V(BR)EBO 4 - V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA -VCE(sat) 0.25 V Base Emitter On Voltage at -VCE = 1 V, -IC = 100 mA -VBE(on) - 1.2 V Transition Frequency at -VCE = 1 V, -IC = 100 mA, f= 100 MHz FT 50 - MHz - - Collector Base Cutoff Current at -VCE = 60 V -ICES - 100 nA DC Current Gain at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 100 mA - |
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