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DN3135 Scheda tecnica(PDF) 1 Page - Microchip Technology |
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DN3135 Scheda tecnica(HTML) 1 Page - Microchip Technology |
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1 / 12 page ![]() 2017 Microchip Technology Inc. DS20005703A-page 1 DN3135 Features • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Normally-on Switches • Solid State Relays •Converters • Linear Amplifiers • Constant-current Sources • Power Supply Circuits • Telecommunications General Description The DN3135 is a low-threshold, Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type SOT-23 (TO-236AB) (Top view) See Table 2-1 for pin information. DRAIN SOURCE GATE GATE SOURCE DRAIN DRAIN SOT-89 (TO-243AA) (Top view) s N-Channel Depletion-Mode Vertical DMOS FET |
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