2N7002 datasheet(1/14 Pages) MICROCHIP

Il numero della parte	2N7002

Spiegazioni elettronici	N-Channel Enhancement-Mode Vertical DMOS FET

PDF	14 Pages

Scroll/Zoom	100%

Produttore elettronici	MICROCHIP [Microchip Technology]

Homepage	http://www.microchip.com

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1 / 14 page

 2018 Microchip Technology Inc.

DS20005797A-page 1

2N7002

Features

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

• Low CISS and Fast Switching Speeds

• Excellent Thermal Stability

• Integral Source-Drain Diode

• High Input Impedance and High Gain

Applications

• Motor Controls

•Converters

• Amplifiers

• Switches

• Power Supply Circuits

• Drivers (Relays, Hammers, Solenoids, Lamps,

Memories, Displays, Bipolar Transistors, etc.)

General Description

The 2N7002 is a low-threshold, Enhancement-mode

(normally-off) transistor that uses a vertical DMOS

structure and a well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors and

the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of

all MOS structures, this device is free from thermal

runaway and thermally induced secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance

and fast switching speeds are desired.

Package Type

3-lead SOT-23

(Top view)

See Table 3-1 for pin information.

DRAIN

SOURCE

GATE

N-Channel Enhancement-Mode Vertical DMOS FET

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