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BUV26G Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte BUV26G
Spiegazioni elettronici  isc Silicon NPN Power Transistors
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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BUV26G Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
BUV26G
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 90V(Min)
·
High Switching Speed
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for fast switching applications such as high
frequency and efficiency converters, switching regulators
and motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
14
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
6
A
PC
Collector Power Dissipation
@ TC=25℃
65
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.92
℃
/W


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