MMBT3904 datasheet(1/2 Pages) ISC

Il numero della parte	MMBT3904

Spiegazioni elettronici	isc Silicon NPN Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Transistor

MMBT3904

DESCRIPTION

·

Low Voltage Use

·

Ultra Super Mini Mold Package

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Telephony and professional communication equipment.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

200

mA

PC

Collector Power Dissipation

@TC=25℃

350

mW

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX UNIT

ICBO

Collector Cutoff Current

VCE= 60V

50

nA

ICEX

Collector Cutoff Current

VCE= 30V

50

nA

hFE

DC Current Gain

IC= 0.1mA ; VCE= 1V

40

IC= 1mA ; VCE= 1V

70

IC= 10mA ; VCE= 1V

100

300

IC= 50mA ; VCE= 1V

60

IC= 100mA ; VCE= 1V

30

VCE(sat)

Collector-Emitter Saturation

Voltage

IC= 10mA ;IB= 1mA

0.2

V

IC= 50mA ;IB= 5mA

0.3

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 10mA ;IB= 1mA

0.65

0.85

V

IC= 50mA ;IB= 5mA

0.95

V

fT

Current Gain-Bandwidth Product

IC=10mA;VCE=20V; f=100MHz

300

MHz

NF

Noise Figure

VCE=5.0V; f=10Hz to 15.7kHz;

IC=100uA; RS=1.0kΩ

5

dB

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