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IXTP32P05T Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTP32P05T Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor IXTP32P05T · FEATURES · Static drain-source on-resistance: RDS(on)≤39mΩ · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATION · Hight side switching · Current regulators · Automatic test equipment · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -50 V VGS Gate-Source Voltage ± 15 V ID Drain Current-Continuous -32 A IDM Drain Current-Single Pulsed -110 A PD Total Dissipation @TC=25℃ 83 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.5 ℃ /W |
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