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AS5047U-HTST Scheda tecnica(PDF) 39 Page - ams AG

Il numero della parte AS5047U-HTST
Spiegazioni elettronici  14-Bit On-Axis Magnetic Rotary Position Sensor with Up to 14-Bit Binary Incremental Pulse Count
PDF  51 Pages
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Produttore elettronici  AMSCO [ams AG]
Homepage  http://www.ams.com
Logo AMSCO - ams AG

AS5047U-HTST Scheda tecnica(HTML) 39 Page - ams AG

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ams Datasheet
Page 39
[v1-00] 2018-Oct-30
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AS5047U − Application Information
Figure 57:
Programming Parameter
Note(s):
1. Programming parameter valid for AS5047U.
Step-by-Step Procedure to Permanently
Program the Non-Volatile Memory (OTP):
The programming can either be performed in 5V operation
using the internal LDO (1
μF on regulator output pin), or in 3V
Operation but using a supply voltage between 3.3V and 3.5V.
1.
Power on cycle
2.
Write the SETTINGS1 and SETTINGS2 and SETTINGS3
registers with the Custom settings for this application
3.
Place the magnet at the desired zero position
4.
Read out the measured angle from the ANGLECOM
register
5.
Write ANGLECOM [5:0] into the ZPOSL register and
ANGLECOM[13:6] into the ZPOSM register
6.
Read reg(0x0016) to reg(0x001A)
7.
Set ECC_en in Register ECC to 1 (ECC protection
enabled)
8.
Read ECC_s (0x3FD0) to get the correct ECC key
9.
Write ECC_s key into ECC register
10. Read reg(0x0016) to reg(0x001B)
→ read register step1
11. Comparison of written content (settings and angle) with
content of read register step1
12. If point 11 is correct, enable OTP read / write by setting
PROGEN = 1 in the PROG register
13. Start the OTP burn procedure by setting PROGOTP = 1
in the PROG register
14. Read the PROG register until it reads 0x0001
(Programming procedure complete)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
TaProg
Programming
temperature
Programming @ Room
Temperature
(25°C ± 20°C)
545
°C
VDD
Positive supply
voltage
5 V operation mode. Supply
voltage during programming
4.5
5
5.5
V
VDD
Positive supply
voltage
3.3 V operation mode. Supply
voltage during programming
3.3
3.5
V
IProg
Current for
programming
Max current during OTP burn
procedure.
100
mA



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