TPU.34)QBDLBHF*

B

Description

The BAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is

designed for high-speed switching application in hybrid thick and thin-film circuits.

Package Dimensions

Style : Pin1.Anode 2.Cathode

3.Common Connection

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90 REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0 C

10 C

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-65~+150

Reverse Voltage

70

V

Repetitive Reverse Voltage

70

V

Forward Current

150

mA

Repetitive Forward Current

500

mA

Forward Surge Current(1ms)

1000

mA

Total Power Dissipation

PD

250

mW

Characteristics at Ta = 25 ::::

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)

70

-

V

IR=100uA

VF(1)

-

715

mV

IF=1mA

VF(2)

-

855

mV

IF=10mA

VF(3)

-

1000

mV

IF=50mA

Forward Voltage

VF(4)

-

1250

mV

IF=150mA

Reverse Current

IR

-

2.5

uA

VR=70V

Total Capacitance

CT

1.5

pF

VR=0, f=1MHz

Reverse Recovery Time

Trr

-

6

nS

IF=IR=10mA, RL=100 Ł measured at IR=1mA

Formosa MS