M45PE40-VMP6TP datasheet(24/35 Pages) STMICROELECTRONICS

24 / 35 page

M45PE40

24/35

Table 6. Power-Up Timing and VWI Threshold

Note: 1. These parameters are characterized only, over the temperature range –40°C to +85°C.

INITIAL DELIVERY STATE

The device is delivered with the memory array

erased: all bits are set to 1 (each byte contains

FFh). All usable Status Register bits are 0.

MAXIMUM RATING

Stressing the device outside the ratings listed in

Table 7. may cause permanent damage to the de-

vice. These are stress ratings only, and operation

of the device at these, or any other conditions out-

side those indicated in the Operating sections of

this specification, is not implied. Exposure to Ab-

solute Maximum Rating conditions for extended

periods may affect device reliability. Refer also to

the STMicroelectronics SURE Program and other

relevant quality documents.

Table 7. Absolute Maximum Ratings

Note: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification, and

the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU

2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500

Ω, R2=500 Ω)

Symbol

Parameter

Min.

Max.

Unit

tVSL1

VCC(min) to S low

µs

tPUW1

Time delay before the first Write, Program or Erase instruction

VWI1

Write Inhibit Voltage

1.5

2.5

Symbol

Parameter

Min.

Max.

Unit

TSTG

Storage Temperature

–65

150

°C

TLEAD

Lead Temperature during Soldering

See note 1

°C

VIO

Input and Output Voltage (with respect to Ground)

–0.6

4.0

VCC

Supply Voltage

–0.6

4.0

VESD

Electrostatic Discharge Voltage (Human Body model) 2

–2000

2000

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