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ASD40C Scheda tecnica(PDF) 3 Page - Applied Power Microelectronics Co.,Ltd.

Il numero della parte ASD40C
Spiegazioni elettronici  1-Line Bi-directional TVS Diode
PDF  7 Pages
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Produttore elettronici  APMICRO [Applied Power Microelectronics Co.,Ltd.]
Homepage  http://www.appliedpowermicro.com/
Logo APMICRO - Applied Power Microelectronics Co.,Ltd.

ASD40C Scheda tecnica(HTML) 3 Page - Applied Power Microelectronics Co.,Ltd.

  ASD40C Datasheet HTML 1Page - Applied Power Microelectronics Co.,Ltd. ASD40C Datasheet HTML 2Page - Applied Power Microelectronics Co.,Ltd. ASD40C Datasheet HTML 3Page - Applied Power Microelectronics Co.,Ltd. ASD40C Datasheet HTML 4Page - Applied Power Microelectronics Co.,Ltd. ASD40C Datasheet HTML 5Page - Applied Power Microelectronics Co.,Ltd. ASD40C Datasheet HTML 6Page - Applied Power Microelectronics Co.,Ltd. ASD40C Datasheet HTML 7Page - Applied Power Microelectronics Co.,Ltd.  
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Revision 12/2017
3 of 6
www.appliedpowermicro.com
ASD08C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
8
V
Breakdown Voltage
VBR
8.5
V
IT = 1mA
Reverse Leakage Current
IR
0.2
µA
VRWM = 8V
Clamping Voltage
VC
10
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
14
V
IPP = 36A (8 x 20µs pulse)
Peak Pulse Current
Ipp
36
A
tp = 8/20μs
Junction Capacitance
CJ
120
pF
VR = 0V, f = 1MHz
ASD33C through ASD40C
ASD12C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
12
V
Breakdown Voltage
VBR
13.3
V
IT = 1mA
Reverse Leakage Current
IR
0.2
µA
VRWM = 12V
Clamping Voltage
VC
19
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
28
V
IPP = 18A (8 x 20µs pulse)
Peak Pulse Current
Ipp
18
A
tp = 8/20μs
Junction Capacitance
CJ
100
pF
VR = 0V, f = 1MHz



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