FTA733 datasheet(1/2 Pages) FS

Il numero della parte	FTA733

Spiegazioni elettronici	PNP TRANSISTOR

PDF	2 Pages

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Produttore elettronici	FS [First Silicon Co., Ltd]

Homepage	http://www.firstsilicon.co.kr/

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PNP TRANSISTOR

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-100

mA

PC

Collector Power Dissipation

250

mW

TJ

Junction Temperature

150

℃

Tstg

Junction and Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -50uA,IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA , IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -50uA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -60V, IE=0

-0.1

uA

Emitter cut-off current

IEBO

VEB= -5 V, IC=0

-0.1

uA

DC current gain

hFE

VCE= -6V, IC= -1mA

90

200

600

Collector-emitter saturation voltage

VCE(sat)

IC= -100mA, IB=- 10mA

-0.18

-0.3

V

Base-emitter voltage

VBE

VCE=-6V,IC=-1.0mA

-0.58

-0.62

-0.68

V

Transition frequency

fT

VCE=-6V,IC=-10mA

100

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHZ

6

pF

Noise figure

NF

VCE=-6V,IC=-0.3mA,

Rg=10k

Ω,f=100HZ

20

dB

CLASSIFICATION OF hFE

Rank

K

P

Q

R

Range

90-180

135-270

200-400

300-600

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

2011.04. 27

1/2

SEMICONDUCTOR

TECHNICAL D ATA

FTA733

Revision No : 0

FEATURE

Excellent hFE linearity

Low noise

Complementary to FTC945

Codice articolo simile - FTA733

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