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FTC3199 Scheda tecnica(PDF) 1 Page - First Silicon Co., Ltd |
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FTC3199 Scheda tecnica(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() 2011.11. 11 1/1 SEMICONDUCTOR TECHNICAL D ATA FTC3199 Revision No : 0 FTC3199 TRANSISTOR (NPN) FEATURES High DC Current Gain Complementary to FTA1267 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V, IC=2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.25 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 3.5 pF Transition frequency fT VCE=10V,IC=1mA 80 MHz CLASSIFICATION OF hFE RANK O R G Y BL RANGE 70-140 120-240 200-400 300-700 t i n U e u l a V r e t e m a r a P l o b m y S VCBO V 0 5 e g a t l o V e s a B - r o t c e ll o C VCEO V 0 5 e g a t l o V r e t t i m E - r o t c e ll o C VEBO V 5 e g a t l o V e s a B - r e t t i m E IC A 5 1 . 0 t n e r r u C r o t c e ll o C PC W m 0 0 4 n o i t a p i s s i D r e w o P r o t c e ll o C RθJA Thermal Resistance From Junction To Ambient 312 ℃/W Tj 0 5 1 e r u t a r e p m e T n o i t c n u J ℃ Tstg 0 5 1 + ~ 5 5 - e r u t a r e p m e T e g a r o t S ℃ 1 2 3 TO-92M DIM MILLIMETERS A B C D E F G 3.25 MAX 4.20 MAX 0.48 MAX 1.52 0.1 1.27 15.30 0.20 0.76 45 0.51 MAX H J E E H J C K 0.25 K B + _ + _ 1. EMITTER 2. COLLECTOR 3. BASE |
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