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FTC3199 Scheda tecnica(PDF) 1 Page - First Silicon Co., Ltd

Il numero della parte FTC3199
Spiegazioni elettronici  High DC Current Gain. Complementary to FTA1267
PDF  2 Pages
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Produttore elettronici  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTC3199 Scheda tecnica(HTML) 1 Page - First Silicon Co., Ltd

  FTC3199 Datasheet HTML 1Page - First Silicon Co., Ltd FTC3199 Datasheet HTML 2Page - First Silicon Co., Ltd  
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2011.11. 11
1/1
SEMICONDUCTOR
TECHNICAL D ATA
FTC3199
Revision No : 0
FTC3199
TRANSISTOR (NPN)
FEATURES
High DC Current Gain
Complementary to FTA1267
MAXIMUM RATINGS (Ta=25
unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=6V, IC=2mA
70
700
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,IB=10mA
0.25
V
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
3.5
pF
Transition frequency
fT
VCE=10V,IC=1mA
80
MHz
CLASSIFICATION OF hFE
RANK
O
R
G
Y
BL
RANGE
70-140
120-240
200-400
300-700
t
i
n
U
e
u
l
a
V
r
e
t
e
m
a
r
a
P
l
o
b
m
y
S
VCBO
V
0
5
e
g
a
t
l
o
V
e
s
a
B
-
r
o
t
c
e
ll
o
C
VCEO
V
0
5
e
g
a
t
l
o
V
r
e
t
t
i
m
E
-
r
o
t
c
e
ll
o
C
VEBO
V
5
e
g
a
t
l
o
V
e
s
a
B
-
r
e
t
t
i
m
E
IC
A
5
1
.
0
t
n
e
r
r
u
C
r
o
t
c
e
ll
o
C
PC
W
m
0
0
4
n
o
i
t
a
p
i
s
s
i
D
r
e
w
o
P
r
o
t
c
e
ll
o
C
RθJA
Thermal Resistance From Junction To Ambient
312
℃/W
Tj
0
5
1
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
J
Tstg
0
5
1
+
~
5
5
-
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
3.25 MAX
4.20 MAX
0.48 MAX
1.52 0.1
1.27
15.30 0.20
0.76
45
0.51 MAX
H
J
E
E
H
J
C
K
0.25
K
B
+
_
+
_
1. EMITTER
2. COLLECTOR
3. BASE


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