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Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com

Contact Details (USA): Tel: +1 (408) 850 5790

Fax: +1 (408) 850 5766

Website: www.filcs.com

FMS2016

SP4T GaAs Multi-Band GSM Antenna Switch

Features:

♦ Available in die form

♦ Suitable for multi-band

GSM/DCS/PCS/EDGE applications

♦ Excellent low control voltage performance

♦ Excellent harmonic performance under

GSM power levels

♦ Very high isolation >31dB typ. at 1.8GHz

♦ Very low insertion loss

♦ Very low control current

Functional Schematic

Description and Applications:

The FMS2016 is a low loss, high power and linear single pole four throw Gallium Arsenide antenna

switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05

0.5

µm switch process technology which offers leading edge performance optimised for switch

applications. The FMS2016 is designed for use in dual, tri and quad – band GSM handset antenna

switch modules and RF front-end modules.

Parameter

Test Conditions

Min

Typ

Max

Units

Tx Insertion Loss

0.5 – 1.0 GHz

1.0 – 2.0 GHz

0.5

0.55

dB

dB

Rx Insertion Loss

0.5 – 1.0 GHz

1.0 – 2.0 GHz

0.5

0.55

dB

dB

Return Loss

0.5 – 2.5 GHZ

32

dB

Isolation

ANT – RF

0.5 – 1.0 GHz

1.0 – 2.0 GHz

34

31

dB

dB

2nd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +33 dBm, 100% Duty Cycle

-75

-75

dBc

dBc

3rd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +33 dBm, 100% Duty Cycle

-75

-75

dBc

dBc

Switching speed : Trise, Tfall

Ton, Toff

10% to 90% RF and 90% to 10% RF

50% control to 90% RF and 50% control to 10% RF

<0.3

<1.0

µs

µs

Note: External DC blocking capacitors are required on all RF ports (typ: 100pF).

All unused ports terminated in 50

Ω.

V1

ANT

V2

RF1

RF3

RF2

RF4

V3

V4