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IXTQ52P10P Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTQ52P10P Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor IXTQ52P10P · FEATURES · Drain Source Voltage- : VDSS= -100V(Min) · Static Drain-Source On-Resistance : RDS(on) ≤50mΩ@VGS= -10V · Fast Switching · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Easy to Mount · Space Savings · High Power Density · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous -52 A IDM Drain Current-Single Plused -130 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.42 ℃ /W |
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