MJD210 datasheet(3/6 Pages) ONSEMI

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MJD200 MJD210

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMP)

Figure 5. DC Current Gain

Figure 6. “On” Voltage

IC, COLLECTOR CURRENT (AMP)

200

400

0.07 0.1

0.3

0.05

100

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 7. Temperature Coefficients

0.7

0.5

°C

TJ = 150°C

– 55

°C

0.05

IC, COLLECTOR CURRENT (AMP)

1.6

1.2

0.8

0.4

0.07

0.2

0.1

0.5

0.3

0.7

TJ = 25°C

NPN

MJD200

PNP

MJD210

VCE = 1 V

VCE = 2 V

0.05

200

400

100

°C

TJ = 150°C

– 55

°C

VCE = 1 V

VCE = 2 V

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1 V

θVC for VCE(sat)

θVB for VBE

0.05

1.6

1.2

0.8

0.4

0.07

0.2

0.1

0.5

0.3

0.7

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1 V

+ 2.5

+ 2

+ 1.5

+ 1

– 0.5

– 1

– 1.5

– 2

+ 0.5

– 2.5

0.07 0.1

0.3

0.05

0.2

0.7

0.5

*APPLIES FOR IC/IB ≤ hFE/3

°C to 150°C

– 55

°C to 25°C

°C to 150°C

– 55

°C to 25°C

+ 2.5

+ 2

+ 1.5

+ 1

– 0.5

– 1

– 1.5

– 2

+ 0.5

– 2.5

0.07 0.1

0.3

0.05

0.2

0.7

0.5

0.07 0.1

0.3

0.2

0.7

0.5

*APPLIES FOR IC/IB ≤ hFE/3

θVC for VCE(sat)

θVB for VBE

°C to 150°C

– 55

°C to 25°C

°C to 150°C

– 55

°C to 25°C

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