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All data sheets are subject to change without notice

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256K EEPROM (32K x 8-Bit)

28C256T

©2001 Maxwell Technologies

All rights reserved.

EEPROM

02.18.02 Rev 5

tion

• Total dose hardness:

- > 100 Krad (Si), dependent upon space mission

• Excellent Single Event Effects:

- SEL

2

- SEU

2

- SEU

2

• Package:

- JEDEC approved byte wide pinout

• High Speed:

- 120, 150 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode), 10-year data

retention

• Page Write Mode:

- 1 to 64 bytes

• Low power dissipation:

- 15 mA active current (cycle = 1 µ s)

- 20 µ A standby current (CE = V

Maxwell Technologies’ 28C256T high density 256k-bit

EEPROM microcircuit features a greater than 100 krad (Si)

total dose tolerance, depending upon space mission. The

28C256T is capable of in-system electrical byte and page pro-

grammability. It has a 64-Byte page programming function to

make its erase and write operations faster. It also features

data polling to indicate the completion of erase and program-

ming operations.

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

krad (Si) radiation dose tolerance. This product is available

with screening up to Class S.

OE, CE, and WE

LOGIC

Y DECODER

X DECODER

DATA LATCH

INPUT/OUTPUT

BUFFERS

Y-GATING

CELL MATRIX

IDENTIFICATION

OE

WE

CE

ADDRESS

INPUTS

V

CC

GND

DATA INPUTS/OUTPUTS

I/O0 - I/O7

Logic Diagram