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2SD1664SQ Scheda tecnica(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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2SD1664SQ Scheda tecnica(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 4 page ![]() 2SD1664SQ NPN Transistor 1 / 4 Features Low Saturation voltage As Complementary Type of the PNP Transistor 2SB1132SQ is Recommended Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Power Dissipation PD 500 mW Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ www.pingjingsemi.com Revision:1.0 Jun-2019 SOT-89 1.Base 2.Collector 3.Emitter Marking:1664P 1664Q 1664R |
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