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KVR16LS11 Scheda tecnica(PDF) 1 Page - Kingston Technology Far East Co. Ltd |
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KVR16LS11 Scheda tecnica(HTML) 1 Page - Kingston Technology Far East Co. Ltd |
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1 / 2 page ![]() KVR16LS11/4 4GB 1Rx8 512M x 64-Bit PC3L-12800 CL11 204-Pin SODIMM DESCRIPTION This document describes ValueRAM's 512M x 64-bit (4GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low voltage, memory module, based on eight 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: FEATURES ● JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply ● VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) ● 800MHz fCK for 1600Mb/sec/pin ● 8 independent internal bank ● Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5 ● Programmable Additive Latency: 0, CL - 2, or CL - 1 clock ● 8-bit pre-fetch ● Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] ● Bi-directional Differential Data Strobe ● Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) ● On Die Termination using ODT pin ● Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C ● Asynchronous Reset ● PCB: Height1.18” (30mm), double sided component ● Lead Free RoHS Compliant Document No. VALUERAM1347-001.D00 12/23/16 Page 1 Memory Module Specifications Continued >> SPECIFICATIONS s e l c y c 1 1 ) D D I ( L C Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power (1.35V) = 2.376 W* 0 - V 4 9 g n it a R L U Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C *Power will vary depending on the SDRAM. |
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