WST2005 datasheet(1/6 Pages) WIINSOK

Il numero della parte	WST2005

Spiegazioni elettronici	P-Ch MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Produttore elettronici	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

Homepage	http://www.winsok.tw/index.html

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1 / 6 page

consumption.

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Sou

rce Voltage

±

12

V

ID@Tc=25℃

Continuous Drain Current, VGS @ -4.5V

1

-

1.6

A

IDM

Pulsed Drain Current

2

-

5

A

PD@TA=25℃

Total Power Dissipation

3

350

mW

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

BVDSS

RDSON

ID

-20V

155mΩ

-1.6A

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent Cdv/dt effect decline

Green Device Available

Features

Applications

High Frequency Point-of-Load Synchronous s

Small power switching for MB/NB/UMPC/VGA

A Switch and Battery Switch for Portable Devices

Load Switch

Absolute Maximum Ratings

SOT

-323 Pin Configuration

Product Summery

WST2005

P-Ch MOSFET

Page 1

www.winsok.tw

Dec.2014

General Description

The H is P-Channel enhancement mode power

MOSFET which is produced with high cell

density and DMOS trench technology .This

device particularly suits low voltage

applications, especially for battery powered

circuits, the tiny and thin outline saves PCB

are electrically identical.

-RoHS Compliant

D

G

S

1

2

3

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