ASPM34 datasheet(5/16 Pages) ONSEMI

5 / 16 page

NFVA25012NP2T

www.onsemi.com

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise noted)

Symbol

Rating

Conditions

Rating

Unit

INVERTER PART

VPN

Supply Voltage

Applied between P − NU, NV, NW

900

VPN(Surge) Supply Voltage (Surge)

Applied between P − NU, NV, NW

1000

VCES

Collector − Emitter Voltage

1200

±IC

Each IGBT Collector Current

TC = 100°C, TJ ≤ 150°C, VDD ≥ 15 V (Note 4)

±ICP

Each IGBT Collector Current (Peak)

TC = 25°C, TJ ≤ 150°C, Under 1 ms Pulse Width

(Note 4)

Collector Dissipation

TC = 25°C per One Chip (Note 4)

347

Operating Junction Temperature

VCES = 960 V

−40~150

°C

VCES = 1200 V

−40~125

°C

CONTROL PART

VDD

Control Supply Voltage

Applied between VDD(H), VDD(L) − COM

VBS

High−Side Control Bias Voltage

Applied between VB(U) − VS(U), VB(V) − VS(V),

VB(W) − VS(W)

VIN

Input Signal Voltage

Applied between IN(UH), IN(VH), IN(WH), IN(UL),

IN(VL), IN(WL) − COM

−0.3~VDD + 0.3

VFO

Fault Output Supply Voltage

Applied between VFO − COM

−0.3~VDD + 0.3

IFO

Fault Output Current

Sink Current at VFO pin

VSC

Current Sensing Input Voltage

Applied between CSC − COM

−0.3~VDD + 0.3

BOOSTSTRAP DIODE PART

VRRM

Maximum Repetitive Reverse Voltage

1200

Forward Current

TC = 25°C, TJ ≤ 150°C (Note 4)

1.0

IFP

Forward Current (Peak)

TC = 25°C, TJ ≤ 150°C, Under 1 ms Pulse Width

(Note 4)

2.0

Operating Junction Temperature (Note 6)

−40~150

°C

TOTAL SYSTEM

tSC

Short Circuit Withstand Time

VDD = VBS ≤ 16.5 V, VPN ≤ 800 V,

TJ = 150°C

Non−repetitive

TSTG

Storage Temperature

−40~150

°C

VISO

Isolation Voltage

60 Hz, Sinusoidal, AC 1 minute, Connection Pins

to Heat Sink Plate

2500

Vrms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

4. These values had been made an acquisition by the calculation considered to design factor.

THERMAL RESISTANCE

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j−c)Q

Junction to Case Thermal

Resistance (Note 5)

Inverter IGBT part (per 1 / 6 module)

−

0.36

°C/W

Rth(j−c)F

Inverter FWD part (per 1 / 6 module)

−

0.66

°C/W

Package Stray Inductance

P to NU, NV, NW (Note 6)

−

5. For the measurement point of case temperature (TC), please refer to Figure 1. DBC discoloration and Picker Circle Printing allowed, please

refer to application note AN−9190 (Impact of DBC Oxidation on SPM® Module Performance).

6. Stray inductance per phase measured per IEC 60747−15.

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