WST2333 datasheet(1/5 Pages) WIINSOK

Il numero della parte	WST2333

Spiegazioni elettronici	P-Ch MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Produttore elettronici	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

Homepage	http://www.winsok.tw/index.html

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1 / 5 page

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-12

V

VGS

Gate-Sou

rce Voltage

±

8

V

ID@Tc=25℃

Continuous Drain Current, VGS @ -4.5V

1

-

6

A

ID@Tc=70℃

Continuous Drain Current, VGS @ -4.5V

1

-3.

9

A

IDM

Pulsed Drain Current

2

-18.8

A

PD@TA=25℃

Total Power Dissipation

3

1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-ambient

1

---

125

℃

/W

RθJC

Thermal Resistance Junction-Case

1

---

80

℃

/W

BVDSS

RDSON

ID

-12V

23mΩ

-

6A

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent Cdv/dt effect decline

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Small power switching for MB/NB/UMPC/VGA

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

SOT

-23N Pin Configuration

Product Summery

WST2333

P-Ch MOSFET

Page 1

www.winsok.tw

Dec.2014

The WST2333 is the highest performance trench

P-Ch MOSFET with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the small power switching and load

switch applications.

The WST2333 meet the RoHS and Green

Product requirement with full function reliability

approved.

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