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M62021 Scheda tecnica(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M62021 Scheda tecnica(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 9 page  ( / 9 ) ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP 2 V mW /°C ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise noted) Symbol Test conditions Limits Unit Parameter Min. Typ. Max. 4.4 ABSOLUTE MAXIMUM RATINGS(Ta=25°C, unless otherwise noted) Symbol Ratings Unit Input voltage 7 Pd Topr Power dissipation -40 ~ +125 V Output current Operating temperature VIN Tstg Storage temperature -20 ~ +75 100 4.2 Detection voltage 4.6 Parameter °C °C Conditions IOUT K Thermal derating (Ta ≥25°C) 800(SIP)/625(DIP)/440(FP) mA mW mV 100 0.25 mA ICC Circuit current VDROP Difference between input and output voltage 0.125 7.5 2.0 4.0 12.0 Vs ∆Vs Hysteresis voltage ∆Vs=VSH-VSL IOUT=0mA V 8(SIP)/6.25(DIP)/4.4(FP) VIN(At the change from H L) 50 200 %/°C 0.005 Vs/ ∆T Temperature coefficient of detection voltage VIN=4V VIN=5V VIN=5V IOUT=50mA IOUT=80mA 5.0 V 4.5 Ct output voltage (high level) 0.02 VOH(Ct) 0.1 0.05 VOL(Ct) VOH(RES) Ct output voltage (low level) RES output voltage (high level) VIN=5V(Note1) VIN=4V(Note1) VIN=5V(Note1) 5.0 4.5 V RES output voltage (low level) VOL(RES) VIN=4V VOH(CS) VOL(CS) IR VF tpd td VOPL(RES) CS output voltage (high level) CS output voltage (low level) VIN=5V VIN=4V VIN=0V,VBAT=3V VBAT=3V VIN=5V VIN=0V (Note1) Backup Di leak current Backup Di forward direction voltage Delay time Response time RES limit voltage of operation IF=10µA VIN=0V 5V,Ct=4.7µF VIN=5V 4V (Note 3) (Note2) (Note2) ISINK=1mA V µA V V ms µs V 0.02 0.05 2.40 2.47 0.08 0.1 0.3 4.0 VOH(RES) RES output voltage (high level) VIN=4V(Note1) V RES output voltage (low level) VOL(RES) VIN=5V 0.02 0.2 0.4 3.5 0.2 0.2 3.50 3.57 ±0.5 ±0.5 0.54 0.6 10 27 55 5.0 25.0 0.65 Note 1.Regarding conditions to measure VOH and VOL,voltage values are to be generated by internal resistance only and no external resistor is used. 2.These values are produced inserting an external resistor,RCS=1M Ω,between the CS pin and GND. 3.With no external resistor (10k Ω internal resistance only) V V V (Note1) ISINK=1mA (Note1) ISINK=1mA |
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