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DS15 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DS15 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistors DS15 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) · Fast Switching Speeds · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A PC Collector Power Dissipation @TC=25℃ 65 W Tj Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.92 ℃ /W |
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