BDX54F datasheet(1/4 Pages) STMICROELECTRONICS

Il numero della parte	BDX54F

Spiegazioni elettronici	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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BDX53F

BDX54F

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

COMPLEMENTARY PNP - NPN DEVICES

s

MONOLITHIC DARLINGTON

CONFIGURATION

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

T

he BDX53F

is a silicon Epitaxial-Base NPN

power

transistor

in

monolithic

Darlington

configuration, mounted in Jedec TO-220 plastic

package. It is intented for use in power linear and

switching applications. The complementary PNP

type is BDX54F.

INTERNAL SCHEMATIC DIAGRAM

October 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

BDX53F

PNP

BDX54F

VCBO

Collector-Base Voltage (IE = 0)

160

V

VCEO

Collector-Emitter Voltage (IB = 0)

160

V

VEBO

Emitter-base Voltage (IC = 0)

5

V

IC

Collector Current

8

A

ICM

Collector Peak Current

12

A

IB

Base Current

0.2

A

Ptot

Total Dissipation at Tc

≤ 25 oC

60

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

For PNP types voltage and current values are negative.

1

2

3

TO-220

R1 Typ. = 10 K

Ω

R2 Typ. = 150

Ω

®

1/4

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