P0780ATFS datasheet(2/6 Pages) UNIKC

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P0780ATF/P0780ATFS

N-Channel High Voltage Mode Field Effect Transistor

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

800

2.5

3.5

4.5

±100

100

1.46

1.94

1620

9.7

8.7

210

110

130

1.4

775

5.5

1Pulse test : Pulse Width

 380 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

VDS = 0V, VGS = ±30V

IDSS

Coss

Crss

Qgs

DYNAMIC

VDS = 800V, VGS = 0V, TC = 25 °C

VDS = VGS, ID = 250mA

Drain-Source Breakdown Voltage

LIMITS

UNITS

VGS = 0V, ID = 250mA

V(BR)DSS

TEST CONDITIONS

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

IF = 7A, VGS = 0V

VDD = 400V, ID = 7A,RG = 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

IF = 7A, dlF/dt = 100A / μS

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

VDS = 10V, ID = 3.5A

Qgd

Output Capacitance

IGSS

VDD = 640V, ID = 7A, VGS = 10V

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

Total Gate Charge

VGS = 10V, ID = 3.5A

VDS = 640V, VGS = 0V, TC = 100 °C

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

Gate-Body Leakage

VGS(th)

RDS(ON)

Input Capacitance

PARAMETER

SYMBOL

Gate Voltage Drain Current

gfs

Gate Threshold Voltage

Forward Transconductance

Drain-Source On-State

Resistance

STATIC

REV 1.1

2014-1-14

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