IXTH 11P50

IXTT 11P50

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

5

9

S

C

iss

4700

pF

C

oss

V

GS

= 0 V, V

430

pF

C

rss

135

pF

t

d(on)

33

ns

t

r

V

GS

= -10 V, V

27

ns

t

d(off)

R

35

ns

t

f

35

ns

Q

G(on)

130

nC

Q

GS

V

GS

= -10 V, V

46

nC

Q

GD

92

nC

R

thJC

0.42

K/W

R

thCS

(TO-247)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

10P50

-10

A

11P50

-11

A

I

SM

Repetitive; pulse width limited by T

JM

10P50

-40

A

11P50

-44

A

V

SD

I

-3

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

500

ns

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

TO-247 AD Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3

TO-268 Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478B2