IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTN 58N50

IXTN 61N50

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

20

30

S

C

iss

11000

pF

C

oss

V

1550

pF

C

rss

225

pF

t

d(on)

30

ns

t

r

V

60

ns

t

d(off)

R

100

ns

t

f

50

ns

Q

g

420

nC

Q

gs

V

55

nC

Q

gd

160

nC

R

thJC

0.20 K/W

R

thCK

0.05

K/W

Source-Drain Diode

Ratings and Characteristics

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

GS

= 0 V

61

A

I

SM

Repetitive; pulse width limited by T

JM

244

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

t

rr

I

,

di/dt = -100 A/µs, V

800

ns

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G

30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004