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IRFL024ZPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFL024ZPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRFL024ZPbF HEXFET® Power MOSFET VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A 05/25/04 www.irf.com 1 AUTOMOTIVE MOSFET PD - 95250 SOT-223 Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applica- tions and a wide variety of other applications. S D G Description Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Features Absolute Maximum Ratings Parameter Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation PD @TA = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and TSTG Storage Temperature Range °C Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient (PCB mount, steady state) ––– 45 °C/W RθJA Junction-to-Ambient (PCB mount, steady state) ––– 120 -55 to + 150 1.0 0.02 ± 20 Max. 5.1 4.1 41 2.8 32 13 See Fig.12a, 12b, 15, 16 |
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