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FSCT17A-UH5 Scheda tecnica(PDF) 9 Page - STMicroelectronics |
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FSCT17A-UH5 Scheda tecnica(HTML) 9 Page - STMicroelectronics |
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9 / 11 page ![]() FSCTxxA-UH5 9/11 These interfaces offer very low thermal resistance. For example, the Sil-Pad® 800 family, from BERGQUIST, which is designed for low cost applications and low mounting pressures, present a typical thermal impedance of 0.45 °C.in²/W. This impedance can increase up to 0.92 °C.in²/W for a 10 psi pres- sure, which is below the normal atmospheric one (1 atm = 1013 hPa = 1013 x 100 x 14.5 x 10-3 = 14.7 psi). Furthermore, a mounting clip will apply a force between 15 to 50 N. This leads to a 25 to 200 psi pressure. In this case, the thermal impedance varies from 0.6 to 0.29 °C.in²/W for the Sil-Pad® 800 family. For the example, we take the worst case hypothesis of a 1°C.in²/W interface between the FSCT case and the heat sink. We take into account only the tab surface for the heat exchange. This surface equals typically: S = 4.7 x 5.1 mm2 = 0.037 in2 This yields to a supplementary resistance of: Rthc-h = 1/0.037 = 27°C/W Then, the maximum power dissipated in the FSCT, for the maximum output power, is given by the following equation: PI V I V CC CC OUT OMS max =⋅ + ⋅ The following numerical application gives (for a 150 mA FAN DC current, a 80 gain for the PNP and a 12 V power supply): IOUT = 150 / 80 = 1.87mA PmW max .. =× × + × × = −− 3 12 10 187 5 5 10 46 33 Then, the temperature error is: () ∆TC =× + = ° 0 046 3 27 138 .. The temperature sensing error can then be neglected whan one considers the operation range (from 0 to 100 °C), even with low cost interface material and without any mounting clip. For example, with a higher pressure, thanks to a clip, this error could be divided by three. 4. TEMPERATURE/VOLTAGE SLOPE CHANGE The OUT voltage versus temperature characteristic of the FSCT has been designed to fit majority cases of application, in the field of PC power supplies. The advantage for the user is to have a minimum count of components while achieving a smart temperature regulation. Nevertheless, some applications require dedicated temperature regulation characteristic. Figure 13 provides an example of a solution which allows to change the ratio between PNP base voltage and the temperature. This schematic only requires a dual single-voltage amplifier (in DIL8 package for example) and less than ten supplementary resistors. This schematic keeps the advantage of applying a constant minimum voltage (VOMS) below TMS tem- perature. Indeed, the U1A operational amplifier subtracts 5.1 V (thanks to the D1 Zener diode, re- fer to VREF) from VOUT. This means that the ratio change is only taken into account when VOUT is lower than 5.1 V. For higher voltages (VOMS in mode ON or VCC in mode OFF), the new base to GND volt- age (VNEW) remains the same (cf. figure 12). So, if one wants to increase accurately the voltage-temperature ratio, i.e. that VOUT will decrease more quickly when Tj increases, figure 13 schematics should be implemented. Indeed, the voltage at the operational amplifier U1B (which acts as a follower) output is: () VV if V V VV RN RD V V otherw NEW OUT OUT REF NEW OUT REF OUT => =− ⋅ − ise Mode OFF Mode ON VOUT VNEW T (°C) j VOMS Step-down TON TOFF Fig. 12: Modified characteristics. |
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