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CEP84A4 Scheda tecnica(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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CEP84A4 Scheda tecnica(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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1 / 5 page ![]() www.doingter.cn — 1 — Description: This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) VDS=40V,ID=120A,RDS(ON)<4mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings:(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current- 1 120 A Continuous Drain Current-TC=100℃ 85 Pulsed Drain Current 2 330 EAS Single Pulse Avalanche Energy 3 1080 mJ PD Power Dissipation 4 130 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics: Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1 1.15 ℃/W RƟJA Thermal Resistance,Junction to Ambient 1 --- D S G CEP84A4 |
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