9.1.3 Thermal Effects due to Power Dissipation

The INA849 dissipates about 200 mW of power under quiescent conditions at a ±15-V supply voltage. The

internal resistor network and output load drive causes an additional power dissipation that depends on the input

signal. The small silicon area of the INA849 causes the internal circuitry to experience temperature gradients

that might adversely affect the electrical performance.

Precision parameters, such as offset voltage, linearity, common-mode rejection ratio, and total harmonic

distortion, can be impacted as a result of these thermal effects in the silicon. The thermal gradient particularly

affects the performance of low-frequency input signals with higher gains (> 10) and large output voltage

variation. As shown in the measurement Figure 9-5, the thermal effect can be minimized by lowering the supply

voltage, if the application permits.

Figure 9-5. Linearity vs Supply Voltage for G=1000

INA849

SBOS945A – NOVEMBER 2020 – REVISED DECEMBER 2020

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