REF3425IDBVR datasheet(13/29 Pages) TI

13 / 29 page

Thermal Hysteresis - Cycle 1 (ppm)

10%

15%

20%

25%

30%

D016

Figure 8-4. Thermal Hysteresis Distribution (VOUT)

8.4 Power Dissipation

The REF34xx voltage references are capable of source and sink up to 10 mA of load current across the rated

input voltage range. However, when used in applications subject to high ambient temperatures, the input voltage

and load current must be carefully monitored to ensure that the device does not exceeded its maximum power

dissipation rating. The maximum power dissipation of the device can be calculated with Equation 2:

(2)

where

• PD is the device power dissipation

• TJ is the device junction temperature

• TA is the ambient temperature

• RθJA is the package (junction-to-air) thermal resistance

Because of this relationship, acceptable load current in high temperature conditions may be less than the

maximum current-sourcing capability of the device. In no case should the device be operated outside of its

maximum power rating because doing so can result in premature failure or permanent damage to the device.

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REF3425, REF3430, REF3433, REF3440, REF3450

SBAS804C – SEPTEMBER 2017 – REVISED FEBRUARY 2021

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REF3425IDBVR Scheda tecnica(PDF) 13 Page - Texas Instruments