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IRF830F Scheda tecnica(PDF) 3 Page - First Silicon Co., Ltd |
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IRF830F Scheda tecnica(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 7 page ![]() 2015. 06. 26 3/7 Revision No : 0 ELECTRICAL CHARACTERISTICS (Cont.) VSD TJ = 25°C, ISD =4.5A, VGS = 0V 1.6 V ISD 4.5 A ISDM 18 A tRR 435 ns QRR TJ = 25°C, ISD = 4.5A, dlSD / A 0 0 1 == t d / µs 3.3 µC Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage (Note 1) Continuous Source to Drain Current Pulse Source to Drain Current Reverse Recovery Time Reverse Recovery Charge MAX Note 2 IRF830/F |
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