SEMICONDUCTOR

TECHNICAL DATA

2011. 9. 14

1/5

Revision No : 0

A

C

0

4

4

u

r

h

t

0

.

5

J

B

M

S

Transient Voltage Suppressor Diodes

Features

Outline Dimensions and Mark

Applications

Clamping Voltage

Limiting Values (Absolute Maximum Rating)

Item

Symbol

Unit

Conditions

Max

Peak power dissipation

W

with a 10/1000us waveform

600

Peak pulse current

A

with a 10/1000us waveform

See Next Table

Peak forward surge current

A

8.3 ms single half sine-wave unidirectional only

100

Operating junction and

storage temperature range

-55 to +150

Electrical Characteristics

Ta=25℃ Unless other wises pecified)

Item

Symbol

Unit

Conditions

Max

Maximum instantaneous forward

Voltage

V

at 50A for unidirectional only

3.5

Thermal resistance

/W

junction to lead

20

/W

junction to ambient

100

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T

℃ per Fig.2.

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

D im e n sio n s in inc h es a n d (m illim e te rs )

DO-214AA(SMB)

.187(4.75)

.167(4.25)

.1 55(3.94)

.1 30(3.30)

.085 (2.1 5)

.073 (1.8 5)

.10 3(2 .61)

.07 8(1 .99)

.0 56(1.41)

.0 35(0.90)

.008 (0.2 0)

.004 (0.1 0)

012(0 31)

.006(0.15)

0.081(2.07 2)

0.228

(5 .80)

M o u ntin g P ad L ay out

0.06 9

(1.76)

0.107

(2.72)

.2 20(5.59)

.2 05(5.21)

AEC-Q101 qualified

θ

θ