SEMICONDUCTOR

TECHNICAL DATA

2011. 9. 14

1/5

Revision No : 0

A

C

0

4

4

u

r

h

t

0

.

5

J

A

M

S

Transient Voltage Suppressor Diodes

■ Features

■ Outline Dimensions and Mark

●P

PP

400W

●V

BR

5.0V-440V

■ Applications

● Clamping Voltage

■ Limiting Values (Absolute Maximum Rating)

Item

Symbol

Unit

Conditions

Max

Peak power dissipation

P

PPM

W

with a 10/1000us waveform

400

Peak pulse current

I

PPM

A

with a 10/1000us waveform

See Next Table

Power dissipation

P

D

W

On infinite heat sink at T

1.0

Peak forward surge current(2)

I

FSM

A

8.3 ms single half sine-wave unidirectional only

40

Operating junction and

storage temperature range

T

℃

0

5

1

+

o

t

5

5

-

■Electrical Characteristics Ta=25

Unless otherwise specified

Item

Symbol

Unit

Conditions

Max

Maximum instantaneous forward

Voltage (3)

V

F

V

at 25A for unidirectional only

3.5/5.0

Thermal resistance

℃/W

junction to lead

30

℃/W

120

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T

p

℃ er Fig.2.

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

Dim ensions in inches and (m illimeters)

DO-214AC(SMA)

.187(4.75)

.167(4.25)

.111(2.83)

.094(2.40)

.062(1.58)

.049(1.25)

.091(2.30)

.075(1.90)

.056(1.41)

.030(0.76)

.008(0.20)

.003(0.08)

.012(0.31)

.006(0.15)

0.077(1.96)

0.220

(5.58)

Mounting Pad Layout

0.065

(1.66)

0.080

(2.04)

.208(5.28)

.194(4.93)