LM3019 datasheet(1/3 Pages) LEIDITECH

Il numero della parte	LM3019

Spiegazioni elettronici	N-Channel Enhancement Mode Power MOSFET

PDF	3 Pages

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Produttore elettronici	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Homepage	http://www.leiditech.com

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V(BR)DSS

RDS(on)MAX

ID

SOT-523

1. GATE

2. SOURCE

3. DRAIN

FEATURE



High density cell design for low RDS(ON)



Voltage controlled small signal switch



Rugged and reliable



High saturation current capability

APPLICATION



Load Switch for Portable Devices



DC/DC Converter

Equivalent Circuit

MARKING

Gate

Source

(Top View)

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain-Source voltage

V

VGS

Gate-Source voltage

20

V

ID

Drain Current

mA

PD

Power Dissipation

150

mW

RθJA

Thermal Resistance from Junction to Ambient 833

℃/W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

2

3

1

200mA

3Ω@10V

4

Ω@5V

50 V

TD

200

50

N-Channel Enhancement Mode Power MOSFET

LM3019

Rev 2.0 :

www.leiditech.com

12.01.2019

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