2N80L-TN3-R datasheet(1/5 Pages) DOINGTER

Il numero della parte	2N80L-TN3-R

Spiegazioni elettronici	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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Produttore elettronici	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Homepage	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=800V,ID=2A,RDS(ON)≤6.3Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

800

V

VGS

Gate-Source Voltage

±30

V

ID

Continuous Drain Current-TC=25℃

2

A

Continuous Drain Current-TC=100℃

1.26

Pulsed Drain Current

---

EAS

Single Pulse Avalanche Energy

1

180

mJ

PD

Power Dissipation(TC=25℃)

50

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

2.5

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

110

D

S

G

2N80L-TN3-R

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