BAS21HT1G datasheet(2/5 Pages) ONSEMI

2 / 5 page

BAS21H

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 200 Vdc)

(VR = 200 Vdc, TJ = 150°C)

−

0.1

100

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR)

250

−

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

−

1000

1250

Diode Capacitance

(VR = 0, f = 1.0 MHz)

−

5.0

Reverse Recovery Time

(IF = IR = 30 mAdc, RL = 100 W)

trr

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820

0.1

D.U.T.

100

0.1

W OUTPUT

PULSE

GENERATOR

W INPUT

SAMPLING

OSCILLOSCOPE

10%

90%

trr

iR(REC) = 3.0 mA

OUTPUT PULSE

(IF = IR = 30 mA; MEASURED

at iR(REC) = 3.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

BAS21HT1G Scheda tecnica(PDF) 2 Page - ON Semiconductor

BAS21HT1G Scheda tecnica(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5

Scheda tecnica Scarica

Link URL