SEMICONDUCTOR

TECHNICAL DATA

US3A ~ US3M

2016. 04. 09

1/2

Revision No : 0

High Efficient Rectifier

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 3.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range Tj, TSTG

3.0

1.0

1.3

1.70

200

5.0

150

5

7

0

5

75

-65

+150

V

A

A

V

A

A

nS

pF

C

NOTES:

1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

50

100

200

400

600

800

1000

50

100

200

400

600

800

1000

35

70

140

280

420

560

700

V

V

US3A

US3B

US3D

US3G

US3J

US3K

US3M

UNITS