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7N20ZL-TN3-R Scheda tecnica(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Il numero della parte 7N20ZL-TN3-R
Spiegazioni elettronici  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Produttore elettronici  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

7N20ZL-TN3-R Scheda tecnica(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
200
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=200V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=2.5A
---
---
0.47
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
210
270
pF
Coss
Output Capacitance
---
40
50
Crss
Reverse Transfer Capacitance
---
6
8
Switching Characteristics
td(on)
Turn-On Delay Time
3,4
VDS=250V, ID=5A,
RGEN=25Ω
---
7
25
ns
tr
Rise Time
3,4
---
55
120
ns
td(off)
Turn-Off Delay Time
3,4
---
9
30
ns
tf
Fall Time
3,4
---
25
60
ns
Qg
Total Gate Charge
3,4
VGS=10V, VDS=400V,
ID=5A
---
6
7.5
nC
Qgs
Gate-Source
Charge
3,4
---
1.5
---
nC
Qgd
Gate-Drain “Miller” Charge
3,4
---
2.2
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,ID=5A
---
---
1.5
V
7N20ZL-TN3-R



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