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FTK3N80F Scheda tecnica(PDF) 2 Page - First Silicon Co., Ltd

Il numero della parte FTK3N80F
Spiegazioni elettronici  3 Amps, 800 Volts N-CHANNEL MOSFET
PDF  6 Pages
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Produttore elettronici  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3N80F Scheda tecnica(HTML) 2 Page - First Silicon Co., Ltd

  FTK3N80F Datasheet HTML 1Page - First Silicon Co., Ltd FTK3N80F Datasheet HTML 2Page - First Silicon Co., Ltd FTK3N80F Datasheet HTML 3Page - First Silicon Co., Ltd FTK3N80F Datasheet HTML 4Page - First Silicon Co., Ltd FTK3N80F Datasheet HTML 5Page - First Silicon Co., Ltd FTK3N80F Datasheet HTML 6Page - First Silicon Co., Ltd  
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
800
V
VDSS
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
7.4
A
TC = 25°C
3
A
Continuous Drain Current
TC = 100°C
ID
1.8
Pulsed Drain Current (Note 1)
IDM
12
A
Single Pulse(Note 2)
EAS
384
mJ
Avalanche Energy
Repetitive Limited by TJ(MAX)
EAR
11
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TC = 25°C
W
Derate above 25°C
PD
W / ˚C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
UNIT
62.5
Junction-to-Ambient
θJA
3
Junction-to-Case
θJc
˚C / W
ELECTRICAL CHARACTERISTICS (TC = 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
OFF CHARACTERISTICS
800
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
VDS = 800V, VGS = 0V
1
µ
A
Drain-Source Leakage Current
IDSS
VDS = 640V, TC = 125°C
10
µ
A
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Body Leakage Current
Reverse
IGSSF
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS / ΔTJ ID = 250
µ
A, Referenced to
25°C
0.9
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
3.0
5.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 1.5A
4.0
5.0
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
600
pF
Output Capacitance
COSS
70
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
10
pF
2008. 1. 28
2/6
Revision No : 0
Junction Temperature
TJ
+150
˚C
TSTG
-55 ~ +150
˚C
MAX
Operating and Storage Temperature
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 400V, ID = 3A, RG = 25Ω
(Note 4,5)
ns
Turn-On Rise Time
tR
50
ns
Turn-Off Fall Time
tF
40
ns
Total Gate Charge
QG
17
nC
Gate-Source Charge
QGS
VDS = 640V,ID = 3A, VGS = 10V
(Note 4,5)
4
nC
Turn-Off Delay Time
Gate-Drain Charge
QGD
8
nC
tD(OFF)
MIN
TYP
MAX
IGSSR
50
40
ns
FTK3N80P/F/D/I
Total Power Dissipation
(TO-251/252/TO-220F/220)
45/45/31/62.5



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