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RS1DF Scheda tecnica(PDF) 1 Page - First Silicon Co., Ltd |
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RS1DF Scheda tecnica(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() 1A GLASS PASSIVATED SURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltag 50 to 1000 Volts Forward Current 1.0 Amperes Features ● Glass passivated junction ● Low forward voltage drop ● High current capability ● Low reverse leakage ● High surge current capability ● High reliablity ● Plastic package has Underwriters Mechanical Data ● Case: SMA-FL molded plastic body ● Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026 ● Polarity: Color band denotes cathode end ● Mounting Position: Any ● Weight: 0.0027 grams (approximate) Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. PARAMETER SYMBOL RS1AF RS1BF RS1DF RS1GF RS1JF RS1KF RS1MF UNITS Maximum repetitive peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V Average Rectified Output Current 0.375″(9.5mm) lead length I o 1.0 A Peak forward surge current, 8.3 mS single half sine-wave superimposed on rated load I FSM 30 A Maximum instantaneous forward voltage at I o V F 1.3 V Maximum DC reverse current @ TJ = 25℃ at rated DC blocking voltage @ TJ = 100℃ I R 5 500 μA Maximum reverse recovery time (Note 1) t rr 150 250 500 nS Typical junction capacitance (Note 2) C j 15 pF Typical thermal resistance (Note 3) RθJA 50 ℃/W Operating junction temperature range T J -55 to +150 ℃ Storage temperature range T STG -55 to +150 ℃ Notes: 1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A. 2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. 3. Thermal Resistance from Junction to Ambient 0.375”(9.5mm) lead length. Laboratory Flammability Classification 94V-0 SEMICONDUCTOR TECHNICAL DATA RS1AF THRU RS1MF 2018. 04. 12 1/2 Revision No : 0 |
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