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LM6403 Scheda tecnica(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Il numero della parte LM6403
Spiegazioni elettronici  P-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Produttore elettronici  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Homepage  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM6403 Scheda tecnica(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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General Description
These P-Channel enhancement mode power field
effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast switching
applications.
Features
VDS
ID
(at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
-30V
-
6A
30mΩ(Max)
45mΩ(Max)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
TC=25°C
I
D
-
6.0
A
TC=100°C
I
D
-
3.6
A
Drain Current – Pulsed
IDM
-
24
A
Maximum Power Dissipation
P
D
1.56
W
Junction and Storage Temperature Range
T
J,TSTG
-55 To 150
℃
Thermal Characteristics
Parameter
Symbol
Typ
Max
Unit
Thermal Resistance junction-case
R
θJc
1.1
℃
/W
Thermal Resistance unction-to-Ambient
R
θJA
60
℃
/W
SOT23-6
S
D
G
S
D
G
D
D
D
Enhancement Mode Power MOSFET
P-Channel
LM6403
Rev :
www.leiditech.com
01.06.2018
1/5


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